TMS1103-1JL
DRAM, 1KX1, 150ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS1103 series DRAM, part number TMS1103-1JL, offers a 1K x 1 memory organization with a density of 1024 bits. This MOS technology component features a maximum access time of 150ns and operates with separate I/O. Housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting, it is suitable for applications requiring reliable memory solutions. The TMS1103-1JL is designed for demanding environments, operating within a temperature range of 0°C to 55°C, and requires 32 refresh cycles. This component finds utility in various industrial and consumer electronics sectors where robust memory performance is critical.
Additional Information
Series: TMS1103RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Temperature_Max | 55.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 32 |
| Supply_Current_Max | 68.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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