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TM893GBK32S-60

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TM893GBK32S-60

EDO DRAM Module, 8MX32, 60ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM893GBK32S-60 is an 8Mx32 EDO DRAM module, offering a memory density of 268435456 bits. This MOS technology component features a maximum access time of 60ns and supports EDO (Extended Data Out) mode for enhanced performance over standard Fast Page Mode. The module provides 72 terminals and is organized as 8 million words by 32 bits. Key operational features include RAS Only, CAS Before RAS, and Hidden Refresh modes, with 2048 refresh cycles. This component operates asynchronously with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V, and has an operating temperature range of 0°C to 70°C. Its 3-state output characteristics are suitable for applications in industrial computing and networking. The TM893GBK32 series module is presented in a rectangular SIMM package.

Additional Information

Series: TM893GBK32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-XSMA-N72
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization8MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals72
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionSingle

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