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TM893GBK32-60

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TM893GBK32-60

EDO DRAM Module, 8MX32, 60ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM893GBK32-60 is an EDO DRAM Module with an 8M x 32 memory organization, delivering a memory density of 268,435,456 bits. This module operates asynchronously with a maximum access time of 60ns. It supports Fast Page Mode with EDO, along with RAS only, CAS before RAS, and hidden refresh cycles. The device operates within a temperature range of 0°C to 70°C and utilizes a nominal supply voltage of 5V, with a maximum of 5.5V. Designed with a 72-terminal SIMM package, the TM893GBK32-60 is suitable for applications requiring high-speed memory solutions in sectors such as industrial automation and computing. The technology employed is MOS with 3-state output characteristics.

Additional Information

Series: TM893GBK32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-XSMA-N72
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization8MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals72
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionSingle

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