TM4SR72EPHBU
Synchronous DRAM Module, 4MX72, 7.5ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM4SR72 synchronous DRAM module, part number TM4SR72EPHBU, offers a 4Mx72 memory organization with a maximum access time of 7.5ns. This CMOS component operates in synchronous mode with a dual-bank page burst access mode. Designed with a 168-terminal DIMM package, it supports a supply voltage range of 3.00V to 3.60V, with a nominal voltage of 3.3V. The operating temperature range is 0°C to 70°C. This module is suitable for applications in computing and industrial automation where high-speed memory is critical. The memory density is approximately 301.99 MByte.
Additional Information
Series: TM4SR72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 7.5000000000000000 |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 301989888.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TM4SR72EPU-12A
Synchronous DRAM Module, 4MX72, 9ns, MOS
TM4SR72EPU-12
Synchronous DRAM Module, 4MX72, 9ns, MOS
TM4SR72EPN-10
Synchronous DRAM Module, 4MX72, 7.5ns, CMOS