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TM4EP72DPN-50

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TM4EP72DPN-50

EDO DRAM Module, 4MX72, 13ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72DPN-50 is a 4Mx72 EDO DRAM Module utilizing MOS technology. This component, part of the TM4EP72 series, offers a maximum access time of 13ns and operates asynchronously. Key features include Dual Bank Page Burst access mode and CAS Before RAS Refresh for efficient memory operation. The module is configured with a 72-bit memory width and a 4M word count, providing a total memory density of 301,989,888 bits. It operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. The 168-pin DIMM package is designed for through-hole mounting. This component is suitable for applications in industrial automation, networking equipment, and legacy computing systems.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max13.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.4000
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max1098.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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