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TM4EP72DJN-70

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TM4EP72DJN-70

EDO DRAM Module, 4MX72, 18ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72DJN-70 is an EDO DRAM Module from the TM4EP72 series. This component features a memory organization of 4Mx72, providing a total memory density of 301,989,888 bits. It operates with a maximum access time of 18ns and utilizes MOS technology. The module supports a dual bank page burst access mode and incorporates CAS Before RAS refresh functionality. Its I/O type is common, and it operates asynchronously. The operating temperature range is from 0°C to 70°C. This 168-terminal DIMM package is designed for applications requiring high-speed data access, commonly found in industrial computing, networking equipment, and embedded systems. The supply voltage ranges from 3.0V to 3.6V, with a nominal voltage of 3.3V.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max18.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.4000
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max828.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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