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TM4EP72CJB-60

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TM4EP72CJB-60

EDO DRAM Module, 4MX72, 60ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72CJB-60 is a 4Mx72 EDO DRAM module featuring a 60ns access time. This CMOS component utilizes fast page mode with EDO (Extended Data Out) capabilities, supporting RAS only, CAS before RAS, and hidden refresh mechanisms. The module is organized as 4M words by 72 bits, offering a total memory density of approximately 302 Megabits. It operates asynchronously within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The TM4EP72CJB-60 is housed in a 168-pin DIMM package, suitable for applications in industrial automation, networking equipment, and legacy computing systems requiring high-speed memory solutions. The output characteristics are 3-state, and the operating temperature range is 0°C to 70°C.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles4096
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max1620.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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