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TM4EP72BPN-70

EDO DRAM Module, 4MX72, 70ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TM4EP72BPN-70 is an EDO DRAM module from the TM4EP72 series. This component features a 4Mx72 memory organization, providing a total density of 301,989,888 bits. It operates with a maximum access time of 70ns and utilizes MOS technology. The module supports single bank page burst access mode, along with RAS-only, CAS-before-RAS, and hidden refresh modes. It is housed in a 168-pin PDMA168 package with a 1.27mm terminal pitch. This component is suitable for applications requiring high-speed data access and buffering, commonly found in computing and industrial automation systems. The supply voltage range is 3.0V to 3.6V, with a nominal value of 3.3V.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max1620.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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