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TM4EP72BPN-50

EDO DRAM Module, 4MX72, 50ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72BPN-50 is a 4Mx72 EDO DRAM module from the TM4EP72 series. This MOS technology component features a 50ns access time and operates with a 3.3V nominal supply voltage. The memory organization is 4M words by 72 bits wide, providing a total density of 301,989,888 bits. It supports single bank page burst access mode and offers RAS only, CAS before RAS, hidden refresh, and self-refresh functionalities. The module utilizes a 168-pin PDMA168 package with a terminal pitch of 1.270mm. This component is suitable for applications in computing and industrial systems requiring high-speed, wide-bus memory solutions. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max2160.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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