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TM4EP72BJN-60

EDO DRAM Module, 4MX72, 60ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72BJN-60 is a 4Mx72 EDO DRAM Module from the TM4EP72 series, offering a 60ns access time. This module utilizes MOS technology and is housed in a 168-pin PDMA168 package. Key features include single bank page burst access mode, RAS only/CAS before RAS/hidden refresh, and self-refresh capabilities with 2048 refresh cycles. The I/O type is common, and the overall memory density is approximately 301.99 MB. Operating voltage ranges from 3.00V to 3.60V, with a nominal of 3.3V. The module supports a 0°C to 70°C operating temperature range. This component is suitable for applications in computing and networking infrastructure.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max1800.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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