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TM4EP72BJN-50

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TM4EP72BJN-50

EDO DRAM Module, 4MX72, 50ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP72BJN-50 is an EDO DRAM module from the TM4EP72 series, featuring a 4Mx72 memory organization with a maximum access time of 50ns. This MOS technology component operates with a single bank page burst access mode and supports RAS only, CAS before RAS, hidden, and self-refresh cycles. The module utilizes a 168-pin PDMA168 package with a 1.27mm terminal pitch. Its common I/O type and 3-state output characteristics are suitable for applications requiring synchronous operation. The operating temperature range is from 0°C to 70°C, with a nominal supply voltage of 3.3V, supporting a range of 3.0V to 3.6V. This component finds application in computing and data storage systems.

Additional Information

Series: TM4EP72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.018000000000000
Supply_Current_Max2160.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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