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TM4EP64DPN-60

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TM4EP64DPN-60

EDO DRAM Module, 4MX64, 15ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4EP64 Series EDO DRAM Module, part number TM4EP64DPN-60, offers a 4M x 64 memory organization with a density of 268,435,456 bits. This module features a maximum access time of 15ns and operates asynchronously with MOS technology. It supports Dual Bank Page Burst access mode and utilizes CAS Before RAS Refresh for efficient operation. The module operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal value of 3.3V. Applications for this component can be found in industrial automation, networking equipment, and consumer electronics requiring high-speed memory solutions. The 168-pin DIMM package is designed for through-hole mounting.

Additional Information

Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max15.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.4000
Self_RefreshNo
Standby_Current_Max0.016000000000000
Supply_Current_Max816.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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