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TM4EP64DPN-50

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TM4EP64DPN-50

EDO DRAM Module, 4MX64, 13ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4EP64DPN-50 is an EDO DRAM module from the TM4EP64 series. This component offers a memory density of 268,435,456 bits, organized as 4M words by 64 bits, utilizing MOS technology. It features dual bank page burst access mode and a maximum access time of 13ns. The module supports CAS before RAS refresh and operates asynchronously with a supply voltage range of 3.0V to 3.6V, nominal at 3.3V. Its 168-pin DIMM package is designed for 3-state outputs and is suitable for applications in networking, industrial automation, and data acquisition systems. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max13.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.4000
Self_RefreshNo
Standby_Current_Max0.016000000000000
Supply_Current_Max976.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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