TM4EP64DJNDZ
EDO DRAM Module, 4MX64, 50ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TM4EP64DJNDZ is a 4Mx64 EDO DRAM module from the TM4EP64 series, featuring a 50ns maximum access time and CMOS technology. This 168-pin DIMM component operates asynchronously with a supply voltage range of 3.0V to 3.6V, typically 3.3V. It supports Fast Page Mode with EDO, incorporating RAS Only, CAS Before RAS, and Hidden Refresh modes for efficient data management. The memory organization is 4M words by 64 bits, providing a total memory density of 268,435,456 bits. These modules are commonly utilized in computing systems and embedded applications requiring high-speed memory access.
Additional Information
Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE WITH EDO |
| Access_Time_Max | 50.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | EDO DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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