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TM4EP64DJN-70

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TM4EP64DJN-70

EDO DRAM Module, 4MX64, 18ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4EP64DJN-70 is an EDO DRAM module from the TM4EP64 series. This 4Mx64 memory organization provides a total density of 268.4Mb, with an asynchronous operating mode and a maximum access time of 18ns. Key features include Dual Bank Page Burst access, CAS Before RAS refresh, and 3-State outputs. The module operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. This component is utilized in various industrial applications requiring high-speed data buffering and storage. The 168-terminal DIMM package is designed for through-hole mounting.

Additional Information

Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max18.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.4000
Self_RefreshNo
Standby_Current_Max0.016000000000000
Supply_Current_Max736.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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