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TM4EP64CPN-70

EDO DRAM Module, 4MX72, 70ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4EP64 series EDO DRAM module, part number TM4EP64CPN-70, offers a memory density of 301,989,888 bits with a 4M x 72 organization. This MOS technology component features a maximum access time of 70ns and operates with a supply voltage range of 3.0V to 3.6V. The module supports single bank page burst access mode and incorporates refresh capabilities including RAS only, CAS before RAS, hidden refresh, and self refresh. Designed for applications requiring high-speed data access and storage, such as in industrial automation, telecommunications infrastructure, and advanced computing systems. The component is housed in a 168-terminal PDMA package with a terminal pitch of 1.27mm.

Additional Information

Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density301989888.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles4096
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.016000000000000
Supply_Current_Max1280.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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