TM4EP64BPN-70
EDO DRAM Module, 4MX64, 70ns, MOS, PDMA168Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4EP64BPN-70 is an EDO DRAM module offering a 4Mx64 memory organization with a density of 268,435,456 bits. This component operates with a maximum access time of 70 nanoseconds and utilizes MOS technology. The module supports various refresh modes, including RAS-only, CAS-before-RAS, hidden refresh, and self-refresh. It is housed in a PDMA168 package, a rectangular plastic/epoxy microelectronic assembly. This component is suitable for applications requiring high-speed data buffering and is commonly found in computing and telecommunications equipment. The module operates within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V and an operating temperature range of 0°C to 70°C.
Additional Information
Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 133.3500 |
| Technology | MOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
| JESD_30_Code | R-PDMA-N168 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | EDO DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 25.5300 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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