TM4EP64BPN-60
EDO DRAM Module, 4MX64, 60ns, MOS, PDMA168Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM4EP64 series EDO DRAM module, part number TM4EP64BPN-60, offers a 268Mbit memory density organized as 4Mx64. This MOS technology component features a maximum access time of 60ns and operates with a nominal supply voltage of 3.3V, within a range of 3.0V to 3.6V. The module supports single bank page burst access mode, with refresh options including RAS only, CAS before RAS, hidden refresh, and self-refresh. Its 168-pin PDMA package, with a terminal pitch of 1.27mm, is suitable for applications requiring high-speed data access and significant memory capacity. Common I/O type and 3-state output characteristics are standard. This component finds application in networking equipment, industrial control systems, and high-performance computing platforms.
Additional Information
Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 133.3500 |
| Technology | MOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDMA-N168 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | EDO DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIMM |
| Package_Equivalence_Code | DIMM168 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 2048 |
| Seated_Height_Max | 25.5300 |
| Self_Refresh | No |
| Standby_Current_Max | 0.016000000000000 |
| Supply_Current_Max | 1600.000000000000000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TM4EP64DPNDGC
EDO DRAM Module, 4MX64, 50ns, CMOS
TM4EP64DJN-50
EDO DRAM Module, 4MX64, 13ns, MOS
TM4EP64DJN-60
EDO DRAM Module, 4MX64, 15ns, MOS