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TM4EP64BJN-60

EDO DRAM Module, 4MX64, 60ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4EP64BJN-60 is an EDO DRAM module featuring a 4M x 64 memory organization, providing 268,435,456 bits of storage. This component operates with a maximum access time of 60ns and utilizes MOS technology. The module supports synchronous operation with single-bank page burst, RAS-only, CAS-before-RAS, and hidden refresh access modes. It includes self-refresh capabilities and operates within a temperature range of 0°C to 70°C, with a nominal supply voltage of 3.3V and a maximum of 3.6V. The TM4EP64BJN-60 is housed in a 168-terminal PDMA package, often utilized in computing and industrial automation applications requiring high-speed data buffering.

Additional Information

Series: TM4EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density268435456.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Seated_Height_Max25.5300
Self_RefreshNo
Standby_Current_Max0.016000000000000
Supply_Current_Max1600.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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