TM4257GU9-20L
DRAM Module, 256KX9, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4257GU9-20L is a 256K x 9 NMOS DRAM module. This asynchronous device features a maximum access time of 200ns and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, along with NIBBLE access mode. The memory organization is 256K words by 9 bits, with each word consisting of 262,144 bits. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage from 4.5V to 5.5V. The component utilizes 3-state output characteristics and is housed in a 30-terminal SIMM package. This module is suitable for applications in industrial automation and consumer electronics.
Additional Information
Series: TM4257GU9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XSMA-N30 |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 16.5100 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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