TM4257FC1-20L
DRAM Module, 1MX1, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4257FC1 DRAM Module, part number TM4257FC1-20L, is a 1M x 1 NMOS DRAM module featuring a 200ns access time. This asynchronous memory component operates with a 5V nominal supply voltage (4.5V to 5.5V range) and supports NIBBLE access mode. Additional features include RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH capabilities, separate I/O, and 3-state output characteristics. The TM4257FC1-20L is housed in a 22-terminal SIMM package with through-hole mounting and a terminal pitch of 2.54mm. This component is suitable for applications requiring reliable memory solutions within the 0°C to 70°C operating temperature range, commonly found in industrial control systems and legacy computing platforms.
Additional Information
Series: TM4257FC1RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XSMA-T22 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIP22,.2 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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