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TM4257FC1-12L

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TM4257FC1-12L

DRAM Module, 1MX1, 120ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4257FC1-12L is a 1M x 1 DRAM module, offering a total memory density of 1048576 bits. This NMOS technology component operates asynchronously with a maximum access time of 120ns. It features separate I/O, a 22-terminal SIMM package with through-hole mounting, and supports NIBBLE access mode. Advanced refresh capabilities include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH cycles, with 256 refresh cycles specified. The device operates within a temperature range of 0°C to 70°C and requires a supply voltage between 4.5V and 5.5V, with a nominal value of 5V. Its output characteristics are 3-state. This component is commonly utilized in industrial automation and legacy computing systems.

Additional Information

Series: TM4257FC1RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModeNIBBLE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-XSMA-T22
Memory_Density1048576.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals22
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP22,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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