TM4257EC4-12L
DRAM Module, 256KX4, 120ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4257EC4 series DRAM Module, part number TM4257EC4-12L, offers a 1Mbit (256K x 4) NMOS DRAM with a maximum access time of 120ns. This component features NIBBLE access mode and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes. The I/O is SEPARATE, and output characteristics are 3-State. Designed for a supply voltage range of 4.5V to 5.5V, with a nominal 5V, this module operates from 0°C to 70°C. The TM4257EC4-12L is provided in a 22-terminal SIMM package with THROUGH-HOLE terminal form and a 2.540mm terminal pitch. It is suitable for applications in computing and industrial automation where reliable asynchronous memory is required.
Additional Information
Series: TM4257EC4RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XSMA-T22 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIP22,.2 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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