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TM4256HE4-12L

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TM4256HE4-12L

DRAM Module, 512KX4, 120ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4256HE4-12L is a 2Mbit DRAM module with a 512K x 4 memory organization. This NMOS technology component offers an asynchronous operating mode and a maximum access time of 120ns. It supports various refresh modes, including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, with 256 refresh cycles specified. The module features separate I/O and 3-state output characteristics, operating within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. Designed for through-hole mounting, this SIMM package component utilizes a 22-terminal configuration. Applications for this memory module can be found in industrial control systems and legacy computing platforms.

Additional Information

Series: TM4256HE4RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-XSMA-T22
Memory_Density2097152.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization512KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals22
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP24,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Supply_Current_Max78.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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