TM4256HE4-10L
Page Mode DRAM, 512KX4, 100ns, MOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4256HE4-10L is a 512K x 4 bit Page Mode DRAM with a maximum access time of 100ns. This MOS technology component features separate I/O and 3-state output characteristics. The memory organization provides 524,288 words with a data width of 4 bits, offering a total memory density of 2097152 bits. Designed with 256 refresh cycles, its operation spans from 0°C to 70°C. The device utilizes a 24-pin SIP package with a terminal pitch of 2.54mm. This DRAM is suitable for applications in computing, consumer electronics, and industrial control systems requiring reliable memory solutions.
Additional Information
Series: TM4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| Memory_Density | 2097152.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 512KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 24 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Equivalence_Code | SIP24,.2 |
| Refresh_Cycles | 256 |
| Supply_Current_Max | 78.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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