TM4256GV9-10L
Page Mode DRAM, 256KX9, 100ns, MOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4256GV9-10L is a Page Mode DRAM with a memory organization of 256K x 9 bits, offering a total density of 2359296 bits. This MOS technology component features a maximum access time of 100ns and operates with a nominal supply voltage of 5V. The I/O type is COMMON with 3-State output characteristics. Designed for applications requiring efficient data access, this component is suitable for use in industrial automation, consumer electronics, and telecommunications systems. The TM4256 series DRAM is housed in a 30-terminal plastic/epoxy package with a terminal pitch of 2.54mm. It supports 256 refresh cycles and has an operating temperature range from 0°C to 70°C.
Additional Information
Series: TM4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | COMMON |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Equivalence_Code | SIP30,.2 |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 11.4300 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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