TM4256GU9-20L
DRAM Module, 256KX9, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM4256GU9-20L is a 256K x 9 NMOS DRAM Module from the TM4256GU9 series. This SIMM package component offers a maximum access time of 200ns and operates asynchronously with a supply voltage range of 4.5V to 5.5V. Key features include RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH modes and 3-state output characteristics. The memory organization is 256K words by 9 bits, with 262,144 words total. This module is suited for applications requiring reliable memory solutions in industrial and embedded systems.
Additional Information
Series: TM4256GU9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XSMA-N30 |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 16.5100 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
Request a Quote
Clients Also Buy
TM4256GU9-10L
DRAM Module, 256KX9, 100ns, NMOS
TM4256GU9-12L
DRAM Module, 256KX9, 120ns, NMOS
TM4256GU9-15L
DRAM Module, 256KX9, 150ns, NMOS
