TM4256GP9-15L
DRAM Module, 256KX9, 150ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM4256GP9-15L is an NMOS DRAM module featuring a 256K x 9 memory organization. This component operates asynchronously with a maximum access time of 150ns and a refresh cycle requirement of 256. It supports Page, RAS Only, CAS Before RAS, and Hidden Refresh operating modes. The module utilizes common I/O and 3-state output characteristics, with a supply voltage range of 4.5V to 5.5V. Designed for specific applications, this SIMM package component is suitable for use in legacy computing systems and embedded control applications where precise timing and established memory architectures are critical.
Additional Information
Series: TM4256GP9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 150.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XSMA-N30 |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 11.4300 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
Request a Quote
Clients Also Buy
TM4256GP9-12L
DRAM Module, 256KX9, 120ns, NMOS
TM4256GP9-20L
DRAM Module, 256KX9, 200ns, NMOS
TMS4164-20NL
Page Mode DRAM, 64KX1, 200ns, NMOS, PDIP16
