TM4256GP9-10L
Page Mode DRAM, 256KX9, 100ns, MOS, PSMA30Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TM4256GP9-10L is a 256K x 9 Page Mode DRAM, operating with a maximum access time of 100ns. This MOS technology component features common I/O and 3-state output characteristics. The memory organization is 256K words by 9 bits, providing a total density of 2.36 Megabits. Designed for standard 5V supply voltage, it operates within a temperature range of 0°C to 70°C. This device utilizes a SIMM package with 30 terminals and is suitable for applications requiring high-speed random access memory. Industries such as consumer electronics and industrial automation commonly leverage this type of memory.
Additional Information
Series: TM4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PSMA-N30 |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 11.4300 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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