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TM4256FL8-12L

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TM4256FL8-12L

DRAM Module, 256KX8, 120ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4256FL8-12L is a DRAM Module from the TM4256FL8 series. This component features a memory organization of 256K x 8 bits, delivering a memory density of 2 Megabits. It operates with an asynchronous mode and a maximum access time of 120ns, utilizing NMOS technology. The module supports various refresh modes, including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, with 256 refresh cycles. Its I/O type is COMMON, and output characteristics are 3-State. Designed with through-hole mounting, it has a 30-terminal SIMM package with a terminal pitch of 2.54mm. This module is suitable for applications in industrial automation and consumer electronics where reliable memory is required. It operates within a temperature range of 0°C to 70°C and a supply voltage of 4.5V to 5.5V.

Additional Information

Series: TM4256FL8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-T30
Memory_Density2097152.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization256KX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals30
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP30,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Seated_Height_Max16.5100
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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