TM4256EU9-20L
Page Mode DRAM, 256KX9, 200ns, MOS, PSMA30Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
The Texas Instruments TM4256EU9-20L is a 256K x 9-bit Page Mode DRAM, offering a 200ns access time. This MOS technology component utilizes a common I/O type and features a 3-state output characteristic. It is housed in a 30-terminal rectangular plastic/epoxy package with a SIMM style, adhering to the R-PSMA-N30 JESD-30 code. The memory organization is 256K words by 9 bits, providing a total density of 2,359,296 bits. Operating within a temperature range of 0°C to 70°C, this device is suitable for applications demanding significant memory capacity and specific access timing. It finds application in areas such as industrial control systems and embedded computing platforms.
Additional Information
Series: TM4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PSMA-N30 |
| Memory_Density | 2359296.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX9 |
| Memory_Width | 9 |
| Number_of_Terminals | 30 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 16.5100 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
Request a Quote
Clients Also Buy
TM4256EU9-10L
Page Mode DRAM, 256KX9, 100ns, MOS, PSMA30
TM4256EU9-12L
Page Mode DRAM, 256KX9, 120ns, MOS, PSMA30
TM4256EU9-15L
Page Mode DRAM, 256KX9, 150ns, MOS, PSMA30