TM4256EQ5-10L
Page Mode DRAM, 256KX5, 100ns, MOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4256 Series TM4256EQ5-10L is a 256K x 5 Page Mode DRAM. This MOS technology component offers a maximum access time of 100ns and utilizes separate I/O. The memory organization provides 262,144 words with a 5-bit width, resulting in a total memory density of 1,310,720 bits. It operates with a nominal supply voltage of 5V and features 3-state output characteristics. The device requires 256 refresh cycles. This component is suitable for applications in industrial automation and consumer electronics, typically found in systems requiring significant memory capacity and high-speed data access. The TM4256EQ5-10L is housed in a 24-terminal Single In-line Package (SIP) with a terminal pitch of 2.540 mm. Operating temperature ranges from 0.0°C to 70.0°C.
Additional Information
Series: TM4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| Memory_Density | 1310720.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX5 |
| Memory_Width | 5 |
| Number_of_Terminals | 24 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Equivalence_Code | SIP24,.2 |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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