TM4256EC4-20L
DRAM Module, 256KX4, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM4256EC4-20L is a 256K x 4 DRAM module utilizing NMOS technology. This module offers a memory density of 1048576 bits and operates in asynchronous mode with a maximum access time of 200ns. Key features include support for PAGE, RAS ONLY/CAS BEFORE RAS, and HIDDEN REFRESH access modes, with separate I/O and 256 refresh cycles. The component is housed in a 22-terminal SIMM package with through-hole mounting and a terminal pitch of 2.54mm. Operating voltage ranges from 4.5V to 5.5V, with a nominal supply of 5V. This component is suitable for applications in industrial automation and consumer electronics requiring reliable memory solutions.
Additional Information
Series: TM4256EC4RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XSMA-T22 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIP22,.2 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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