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TM4164EQ5-20L

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TM4164EQ5-20L

DRAM Module, 64KX5, 200ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TM4164EQ5-20L is a 64K x 5 NMOS DRAM module. This asynchronous memory component features a 200ns maximum access time and operates with a 5V nominal supply voltage, ranging from 4.5V to 5.5V. The memory organization is 64K words by 5 bits, providing a total density of 327.68 Kbits. It utilizes a PAGE access mode and supports RAS ONLY REFRESH with 256 refresh cycles. The I/O type is SEPARATE, and the output characteristics are 3-State. This component is housed in a 24-pin SIMM package with through-hole termination and a terminal pitch of 2.54mm. It is designed for operation within a temperature range of 0°C to 70°C. Applications for this type of memory module include legacy computing systems and embedded control applications.

Additional Information

Series: TM4164EQ5RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModePAGE
Access_Time_Max200.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-XSMA-T24
Memory_Density327680.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization64KX5
Memory_Width5
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP24,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Supply_Current_Max148.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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