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TM4164EQ5-12L

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TM4164EQ5-12L

DRAM Module, 64KX5, 120ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4164EQ5-12L is a NMOS DRAM module from the TM4164EQ5 series. This component features a memory organization of 64K words by 5 bits, providing a density of 327680 bits. It operates asynchronously with a maximum access time of 120ns and utilizes PAGE access mode. The I/O is separate, and the module supports RAS ONLY REFRESH with 256 refresh cycles. Designed with a 24-terminal SIMM package, it offers through-hole mounting and a terminal pitch of 2.54mm. This component is rated for an operating temperature range of 0°C to 70°C and requires a supply voltage between 4.5V and 5.5V, with a nominal 5V. The output characteristics are 3-state. This type of memory component is commonly found in industrial control systems and legacy computing applications.

Additional Information

Series: TM4164EQ5RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-XSMA-T24
Memory_Density327680.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization64KX5
Memory_Width5
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP24,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Supply_Current_Max192.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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