TM4164EL9-20L
DRAM Module, 64KX9, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TM4164EL9-20L is a 64K x 9 NMOS DRAM module, part of the TM4164EL9 series. This component offers a page access mode with a maximum access time of 200ns. It features RAS-only refresh with 256 refresh cycles and a common I/O type. The module operates asynchronously with a supply voltage range of 4.5V to 5.5V. Designed with through-hole mounting and a rectangular SIMM package, it is suitable for applications in consumer electronics and industrial control systems. The memory organization is 64K words by 9 bits, providing a total memory density of 589,824 bits. Operating temperature ranges from 0°C to 70°C.
Additional Information
Series: TM4164EL9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XSMA-T30 |
| Memory_Density | 589824.0000000000000000 |
| Memory_IC_Type | DRAM MODULE |
| Memory_Organization | 64KX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIP30,.2 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 256 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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