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TM4164EC4-12L

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TM4164EC4-12L

DRAM Module, 64KX4, 120ns, NMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4164EC4-12L is a 262,144 bit DRAM module from the TM4164EC4 series. This memory component features a 64K x 4 organization, providing a 4-bit data width. It operates asynchronously with a maximum access time of 120ns and utilizes NMOS technology. The module supports page mode access and incorporates RAS-only refresh with 256 refresh cycles. Designed with separate I/O, it offers 3-state output characteristics. The TM4164EC4-12L is housed in a 22-terminal SIMM package suitable for through-hole mounting. It operates within a temperature range of 0°C to 70°C and requires a supply voltage of 5V (±10%). This component is found in applications requiring reliable and efficient memory solutions within industrial and embedded systems.

Additional Information

Series: TM4164EC4RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-XSMA-T22
Memory_Density262144.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals22
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIP22,.2
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles256
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionSingle

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