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TM4100GBD8-6

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TM4100GBD8-6

Fast Page DRAM Module, 4MX8, 60ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TM4100GBD8-6 is a Fast Page DRAM Module with a 4M x 8 organization, providing a total density of 33,554,432 bits. This CMOS component features a maximum access time of 60ns and operates in asynchronous mode. Key refresh modes supported include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, with 1024 refresh cycles. The I/O type is COMMON, and the output characteristics are 3-State. This SIMM package component is designed for applications requiring rapid data access and is commonly utilized in industrial automation and legacy computing systems. It operates within a temperature range of 0°C to 70°C and requires a supply voltage of 5V.

Additional Information

Series: TM4100GBD8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-N30
Memory_Density33554432.0000000000000000
Memory_IC_TypeFAST PAGE DRAM MODULE
Memory_Organization4MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals30
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIM30
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles1024
Seated_Height_Max23.1140
Standby_Current_Max0.008000000000000
Supply_Current_Max760.000000000000000
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch2.540
Terminal_PositionSingle

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