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TM4100EBD9-80

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TM4100EBD9-80

Fast Page DRAM Module, 4MX9, 80ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TM4100EBD9-80 is a Fast Page DRAM Module featuring a 4M x 9 memory organization with a maximum access time of 80ns. This CMOS component supports Fast Page, RAS Only, CAS Before RAS, and Hidden Refresh modes, offering flexibility in memory access and refresh operations. Its asynchronous operating mode and 3-state output characteristics are suitable for various memory system designs. The TM4100EBD9-80 is packaged in a 30-terminal SIMM form factor, designed for through-hole mounting. This module finds application in computing systems, industrial automation, and embedded control where reliable and efficient memory is critical. It operates within a 0°C to 70°C temperature range and requires a supply voltage of 5V nominal.

Additional Information

Series: TM4100EBD9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-N30
Memory_Density37748736.0000000000000000
Memory_IC_TypeFAST PAGE DRAM MODULE
Memory_Organization4MX9
Memory_Width9
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals30
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIM30
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles1024
Seated_Height_Max23.1140
Standby_Current_Max0.009000000000000
Supply_Current_Max675.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch2.540
Terminal_PositionSingle

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