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TM4100EBD9-10

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TM4100EBD9-10

Fast Page DRAM Module, 4MX9, 100ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM4100EBD9 Fast Page DRAM Module, part number TM4100EBD9-10. This component features a 4M x 9 memory organization with a maximum access time of 100ns and operates using CMOS technology. It supports Fast Page, RAS Only, CAS Before RAS, and Hidden Refresh modes, with an asynchronous operating mode. The module is housed in a 30-terminal SIMM package. Typical applications include memory subsystems in computing and embedded systems where high-speed data buffering and access are critical. The supply voltage range is 4.5V to 5.5V with a nominal 5V requirement. Operating temperature range is 0°C to 70°C.

Additional Information

Series: TM4100EBD9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-N30
Memory_Density37748736.0000000000000000
Memory_IC_TypeFAST PAGE DRAM MODULE
Memory_Organization4MX9
Memory_Width9
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals30
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIM30
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles1024
Seated_Height_Max23.1140
Standby_Current_Max0.009000000000000
Supply_Current_Max585.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch2.540
Terminal_PositionSingle

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