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TM4100EAD9-70

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TM4100EAD9-70

Fast Page DRAM Module, 4MX9, 70ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM4100EAD9-70 is a 4M x 9 Fast Page DRAM Module engineered with CMOS technology. This module offers a maximum access time of 70 ns and supports asynchronous operation. It features auto and self-refresh capabilities with 1024 refresh cycles. The I/O type is common with 3-state output characteristics. Designed in a rectangular SIMM package, this component is suitable for applications requiring high-speed data access and reliable memory solutions across various industrial and commercial electronics sectors. The module operates within a temperature range of 0°C to 70°C and utilizes a nominal supply voltage of 5V.

Additional Information

Series: TM4100EAD9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-N30
Memory_Density37748736.0000000000000000
Memory_IC_TypeFAST PAGE DRAM MODULE
Memory_Organization4MX9
Memory_Width9
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals30
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSIM30
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles1024
Seated_Height_Max22.9870
Self_RefreshYes
Standby_Current_Max0.009000000000000
Supply_Current_Max810.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch2.540
Terminal_PositionSingle

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