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TM2SN64EPN-12

Synchronous DRAM Module, 2MX64, 8ns, MOS, PDMA168

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM2SN64EPN-12 is a Synchronous DRAM module offering a 2M x 64 memory organization with an 8ns access time. This MOS technology component operates with a dual bank page burst access mode and supports auto/self refresh capabilities. The module is designed for applications requiring high-speed data access and efficient memory management. It features a 168-pin PDMA package and operates within a temperature range of 0°C to 70°C, with a nominal supply voltage of 3.3V. This component is suitable for use in various computing, networking, and industrial automation systems.

Additional Information

Series: TM2SN64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.3500
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max8.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max83.30000
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N168
Memory_Density134217728.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization2MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles4096
Seated_Height_Max28.7000
Self_RefreshYes
Standby_Current_Max0.016000000000000
Supply_Current_Max1000.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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