TM2SN64EPH-10
Synchronous DRAM Module, 2MX64, 7ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM2SN64EPH-10 is a 134,217,728 bit synchronous DRAM module within the TM2SN64 series. Featuring a 2M x 64 memory organization, this CMOS component offers a maximum access time of 7ns and supports a clock frequency up to 100MHz. The module operates in dual bank page burst mode with common I/O and 3-state output characteristics. It is designed for a supply voltage range of 3.0V to 3.6V (nominal 3.3V) and operates within a temperature range of 0°C to 70°C. This 168-terminal DIMM package is suitable for applications in computing, networking, and industrial automation where high-speed memory is critical.
Additional Information
Series: TM2SN64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Clock_Frequency_Max | 100.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 134217728.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 2MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Equivalence_Code | DIMM168 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 4096 |
| Standby_Current_Max | 0.008000000000000 |
| Supply_Current_Max | 720.000000000000000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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