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TM2EP64DPN-50

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TM2EP64DPN-50

EDO DRAM Module, 2MX64, 13ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM2EP64DPN-50 is a 128 Megabit EDO DRAM module from the TM2EP64 series, organized as 2M words by 64 bits. This asynchronous memory component features a maximum access time of 13ns and utilizes a single-bank page burst access mode. The module supports CAS before RAS refresh with 2048 refresh cycles. It operates with a supply voltage range of 3.0V to 3.6V, typically 3.3V. The common I/O type and 3-state output characteristics are standard for this MOS technology device. This 168-terminal DIMM package is suitable for applications in industrial automation and networking equipment where high-speed, burst-mode memory access is critical. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TM2EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max13.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density134217728.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization2MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Standby_Current_Max0.008000000000000
Supply_Current_Max960.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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