TM2EP64DJNDZ
EDO DRAM Module, 2MX64, 50ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM2EP64DJNDZ is a 168-pin EDO DRAM module from the TM2EP64 series. This component is organized as 2M x 64, providing a total memory density of 134,217,728 bits. It features a maximum access time of 50ns and operates using CMOS technology. The module supports fast page mode with EDO, along with RAS-only, CAS-before-RAS, and hidden refresh modes. Designed for asynchronous operation, it has an operating temperature range of 0°C to 70°C and a nominal supply voltage of 3.3V, with a maximum of 3.6V. This component is suitable for applications in computing, networking, and industrial automation where high-speed memory is critical.
Additional Information
Series: TM2EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE WITH EDO |
| Access_Time_Max | 50.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 134217728.0000000000000000 |
| Memory_IC_Type | EDO DRAM MODULE |
| Memory_Organization | 2MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TM2EP64DJN-50
EDO DRAM Module, 2MX64, 13ns, MOS
TM2EP64DJN-60
EDO DRAM Module, 2MX64, 15ns, MOS
TM2EP64DJN-70
EDO DRAM Module, 2MX64, 18ns, MOS
