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TM2EP64DJN-70

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TM2EP64DJN-70

EDO DRAM Module, 2MX64, 18ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TM2EP64DJN-70 is a 134217728-bit EDO DRAM module from the TM2EP64 series, featuring a 2Mx64 memory organization. This component operates with a maximum access time of 18ns and utilizes MOS technology. Its asynchronous operating mode supports single bank page burst access and CAS before RAS refresh cycles. The module is housed in a 168-pin DIMM package, suitable for applications requiring high-speed memory. Typical industries utilizing this type of memory include computing and industrial automation. The component operates within a temperature range of 0°C to 70°C and requires a supply voltage typically between 3.0V and 3.6V.

Additional Information

Series: TM2EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max18.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density134217728.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization2MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Standby_Current_Max0.008000000000000
Supply_Current_Max720.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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