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TM2EP64DJN-60

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TM2EP64DJN-60

EDO DRAM Module, 2MX64, 15ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TM2EP64DJN-60 is a 134,217,728-bit EDO DRAM module from the TM2EP64 series. This component features a memory organization of 2Mx64, delivering a 64-bit data width. It operates with a maximum access time of 15ns and utilizes MOS technology. The module supports a single bank page burst access mode and incorporates CAS-before-RAS refresh functionality. Power is supplied within a range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The TM2EP64DJN-60 is housed in a 168-terminal DIMM package. This component finds application in computing systems and embedded control applications requiring high-speed memory performance.

Additional Information

Series: TM2EP64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max15.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N168
Memory_Density134217728.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization2MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM168
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles2048
Standby_Current_Max0.008000000000000
Supply_Current_Max800.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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