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TM2EJ64EPN-60

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TM2EJ64EPN-60

EDO DRAM Module, 2MX64, 60ns, MOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM2EJ64EPN-60 is an EDO DRAM module from the TM2EJ64 series. This component features a 2Mx64 memory organization, providing a total density of 134,217,728 bits. It operates with an asynchronous, fast page mode access, enhanced with EDO capabilities, and offers a maximum access time of 60 nanoseconds. The module supports RAS only, CAS before RAS, and hidden refresh cycles, with 4096 refresh cycles required. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 3.3V (nominal) and utilizes MOS technology. The TM2EJ64EPN-60 is housed in a 144-pin DIMM package. This component is suitable for applications in computing, networking, and industrial automation systems.

Additional Information

Series: TM2EJ64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDMA-N144
Memory_Density134217728.0000000000000000
Memory_IC_TypeEDO DRAM MODULE
Memory_Organization2MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_Equivalence_CodeDIMM144,32
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles4096
Self_RefreshNo
Standby_Current_Max0.008000000000000
Supply_Current_Max720.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch0.800
Terminal_PositionDual

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