TM16100EBD9-70
Fast Page DRAM Module, 16MX9, 70ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TM16100EBD9-70 is a 16M x 9 Fast Page DRAM Module utilizing CMOS technology. This asynchronous memory component offers a maximum access time of 70ns and features RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes for efficient operation. The module employs a SIMM package with 30 terminals and a 2.540mm pitch. Designed for a supply voltage range of 4.5V to 5.5V with a nominal 5V, it supports 4096 refresh cycles. This component is suitable for applications requiring high-density, fast-page mode memory access within the industrial, computing, and telecommunications sectors.
Additional Information
Series: TM16100EBD9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XSMA-N30 |
| Memory_Density | 150994944.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM MODULE |
| Memory_Organization | 16MX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SIMM |
| Package_Equivalence_Code | SIM30 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 4096 |
| Standby_Current_Max | 0.009000000000000 |
| Supply_Current_Max | 720.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Single |
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