TM124MBK36V-60
Fast Page DRAM Module, 1MX36, 60ns, CMOS, PSMA72Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TM124MBK36V-60 is a Fast Page DRAM Module from the TM124MBK36 series. This component features a 1M x 36 memory organization, delivering a memory density of 37,748,736 bits. It operates with a maximum access time of 60ns and utilizes CMOS technology. The module is housed in a 72-terminal SIMM package (R-PSMA-N72) with a terminal pitch of 1.270mm. Designed for common I/O, it supports 3-state output characteristics and a refresh cycle of 1024. The operating temperature range is 0°C to 70°C. This component is suitable for applications in industrial automation and telecommunications.
Additional Information
Series: TM124MBK36RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 60.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PSMA-N72 |
| Memory_Density | 37748736.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM MODULE |
| Memory_Organization | 1MX36 |
| Memory_Width | 36 |
| Number_of_Terminals | 72 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SIMM |
| Package_Equivalence_Code | SSIM72 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 1024 |
| Seated_Height_Max | 25.5270 |
| Standby_Current_Max | 0.004000000000000 |
| Supply_Current_Max | 390.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Single |
Request a Quote
Clients Also Buy
TM124MBK36Q-80
Fast Page DRAM Module, 1MX36, 80ns, CMOS
TM124MBK36R-80L
Fast Page DRAM Module, 1MX36, 80ns, CMOS
TM124MBK36B-60L
Fast Page DRAM Module, 1MX36, 60ns, CMOS